VAS06R0210DP
ID (A) |
38 |
VDS(V) |
60 |
MOS Type |
N |
ChipLead P/N |
VAS06R0210DP |
Package Type |
 TO252 |
Configuration |
Single |
VGS(V) |
±20 |
Vth(V) |
1.2/1.8/2.5 |
RDS(ON) (mΩ) max. at VGS= |
|||
10V |
4.5V |
2.5V |
1.8V |
17/21 |
20/24 |
- |
- |
Ciss(pF) |
1680 |
Coss(pF) |
115 |
Crss (pF) |
85 |
Qg (nC) 10V |
28 |
Qg (nC) 4.5V |
- |
Qgs(nC) |
3.5 |
Qgd(nC) |
6.5 |
Rg Ω |
2.2 |
EAS(mJ) |
42 |
PD(W) Tc=25℃ |
63 |
