VAP50R10KDO
ID (A) |
1 |
VDS(V) |
500 |
MOS Type |
N |
ChipLead P/N |
VAP50R10KDO |
Package Type |
 TO252 |
Configuration |
Single |
VGS(V) |
±30 |
Vth(V) |
2.0 / - / 4.0 |
RDS(ON) (mΩ) max. at VGS= |
|||
10V |
4.5V |
2.5V |
1.8V |
8750/10000 |
- |
- |
- |
Ciss(pF) |
105 |
Coss(pF) |
14 |
Crss (pF) |
6 |
Qg (nC) 10V |
4.53 |
Qg (nC) 4.5V |
- |
Qgs(nC) |
0.81 |
Qgd(nC) |
2.71 |
Rg Ω |
- |
EAS(mJ) |
40 |
PD(W) Tc=25℃ |
18.5 |
